Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

Importancia y uso:

5.1 Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of survivability) of components to be used in them. A determination of hardness is often necessary for the short term (≈100 μs) as well as long term (permanent damage) following exposure. See Practice E722.

Subcomité:

E10.07

Referida por:

F1190-24, E1854-19

Volúmen:

12.02

Número ICS:

29.045 (Semiconducting materials)

Palabras clave:

annealing factor; annealing function; displacement damage; integrated circuits; neutron damage; neutron degradation; photoconducting device; rapid annealing; semiconductor devices;